PART |
Description |
Maker |
MRF5175 |
1NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor
|
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification Silicon PNP Transistor Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS High power NPN silicon transistor Silicon NPN switching transistor Silicon NPN transistor PNP power transistor Small signal NPN transistor Medium power NPN silicon transistor Dual npn-pnp complementary bipolar transistor Complementary power transistors NPN power transistors 模拟IC Analog IC 模拟IC
|
RECOM Electronic GmbH Vishay Intertechnology, Inc.
|
2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
|
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC[NEC]
|
BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system 8 AMPERE POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc MOTOROLA[Motorola Inc] Motorola, Inc ON Semiconductor
|
1N3664 1N3494 1N3493 1N3663 1N3491 1N3492 1N3495 S |
Silicon Power Rectifier Standard Rectifier (trr more than 500ns) Silicon Power Rectifier 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-208AA
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|